Mark W. Dowley
Solid State Communications
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.
Mark W. Dowley
Solid State Communications
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
John G. Long, Peter C. Searson, et al.
JES
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films