Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films