Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
T. Schneider, E. Stoll
Physical Review B
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials