Qinghuang Lin, Shyng-Tsong Chen, et al.
ICSICT 2010
We find experimentally and calculate by a numerical method the geometrical contribution to resistance due to current bending and constriction in 4-point contact resistance measurements in two configurations: 2I (cross stripes) and 2L. The geometrical effects in thin film couples increase in a 2I and decrease in a 2L with decreasing film thickness/width ratios, rendering the 2L configuration most suitable for interface resistance studies, particularly when the thickness to width ratios are less than 0.5. A set of scaling equations is provided, which enables the application of our results to predict geometrical contributions in these geometries for different materials and dimensions.
Qinghuang Lin, Shyng-Tsong Chen, et al.
ICSICT 2010
K.N. Chen, C. Tsang, et al.
VMIC 2006
A.C. Callegari, B.K. Furman, et al.
ESSDERC 1992
S.K. Kang, S. Purushothaman
ECTC 1998