Shubham Jain, Ching-Tzu Chen, et al.
ISCAS 2023
Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment. © 2006 American Institute of Physics.
Shubham Jain, Ching-Tzu Chen, et al.
ISCAS 2023
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Applied Physics Letters
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JES
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IEEE Electron Device Letters