Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates
- Shu-Jen Han
- Josephine Chang
- et al.
- 2010
- IEDM 2010
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12 results for Rainer Loesing
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
- D.-G. Park
- K. Stein
- et al.
- 2009
- VLSI-TSA 2009
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
- K. Cheng
- A. Khakifirooz
- et al.
- 2009
- VLSI Technology 2009
Effect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
- A. Madan
- J. Li
- et al.
- 2008
- ECS Meeting 2008
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2017
- JVSTB
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
- Shahab Siddiqui
- Min Dai
- et al.
- 2017
- JVSTB
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2014
- Thin Solid Films