J.R. Kirtley, C.C. Tsuei, et al.
Journal of Superconductivity
For CoFeBMgO -based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal. At high junction bias close to 1 V, the probability of magnetic switching in spin-torque-driven switches sometimes appears to decrease. This is shown to be due to a backhopping behavior occurring at high bias, and it is asymmetric in bias voltage, being more pronounced in the bias direction for antiparallel-to-parallel spin-torque switch, i.e., in the direction of electrons tunneling into the free layer. This asymmetry hints at processes involving hot electrons within the free-layer nanomagnet. © 2009 American Institute of Physics.
J.R. Kirtley, C.C. Tsuei, et al.
Journal of Superconductivity
J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions
J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters