Katharina Schneider, Yannick Baumgartner, et al.
Optica
The monolithic integration of power-efficient optoelectronic devices with CMOS circuits is critical for future on-chip optical communication. In such platforms, ultra-high-speed photodetectors operating at datacom wavelengths are essential to convert optical signals in the electrical domain. Here, we demonstrate ultra-compact high-speed III-V/Si photodetectors integrated on silicon photonics and exclusively fabricated with processes and materials compatible with CMOS foundries. The sub-femtofarad capacitance, high responsivity photodetectors demonstrate a bandwidth around 65 GHz and data reception at 100 GBd OOK. Their thickness and efficiency enable an integration in the back-end-of-line without using an amplifier, further reducing the power consumption of the link.
Katharina Schneider, Yannick Baumgartner, et al.
Optica
Clarissa Convertino, Kirsten E. Moselund, et al.
IEDM 2019
Veeresh Deshpande, Herwig Hahn, et al.
IEEE T-ED
Felix Eltes, J. Elliott Ortmann, et al.
CLEO/Europe-EQEC 2019