Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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141 results for Marilyne Sousa

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
- - Clarissa Convertino
  - Kirsten E. Moselund
  - et al.
- 2019
- IEDM 2019
8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory
- - Iason Giannopoulos
  - Abu Sebastian
  - et al.
- 2018
- IEDM 2018
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- - Clarissa Convertino
  - C. B. Zota
  - et al.
- 2018
- IEDM 2018
High Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- - C. B. Zota
  - Clarissa Convertino
  - et al.
- 2018
- IEDM 2018
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- - Herwig Hahn
  - Veeresh Deshpande
  - et al.
- 2017
- IEDM 2017
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- - Veeresh Deshpande
  - V. Djara
  - et al.
- 2015
- IEDM 2015
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
- - Lukas Czornomaz
  - N. Daix
  - et al.
- 2013
- IEDM 2013
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- - Lukas Czornomaz
  - N. Daix
  - et al.
- 2012
- IEDM 2012
Waveguide coupled III-V photodiodes monolithically integrated on Si
- - Pengyan Wen
  - Preksha Tiwari
  - et al.
- 2022
- Nature Communications
High-speed III-V nanowire photodetector monolithically integrated on Si
- - Svenja Mauthe
  - Yannick Baumgartner
  - et al.
- 2020
- Nature Communications