C.L. Schow, L. Schares, et al.
ECOC 2006
We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 × 10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a - 3-dB bandwidth of 29 GHz (27 GHz at a bias voltage of - 1 V. The detectors with S = 0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at - 1-V bias. © 2004 IEEE.
C.L. Schow, L. Schares, et al.
ECOC 2006
S.J. Koester, J. Schaub, et al.
DRC 2004
G. Dehlinger, J. Schaub, et al.
LEOS 2005
R. Hammond, S.J. Koester, et al.
DRC 1999