K.L. Saenger, P.C. Andricacos, et al.
MRS Online Proceedings Library
DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).
K.L. Saenger, P.C. Andricacos, et al.
MRS Online Proceedings Library
D.B. Beach, R.T. Collins, et al.
MRS Proceedings 1992
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
L. Tilly, P.M. Mooney, et al.
Applied Physics Letters