S.J. Koester, K. Ismail, et al.
DRC 1997
Paper
80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
Abstract
DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).
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