Degradation of thin SiO 2 gate oxides by atomic hydrogen
F. Cartier, D.J. DiMaria, et al.
DRC 1994
It is demonstrated that pre-existing silicon dangling bonds in Al-gate metal-oxide-semiconductor capacitors on (111) silicon substrates are passivated during hot-electron stress, while defects - of an as yet unidentified nature - are simultaneously generated. This degradation behavior mimics the interface degradation caused by atomic hydrogen from a remote plasma, suggesting that hydrogen release by hot electrons leads to interface degradation, but the silicon dangling bond is not the dominant interface defect. © 1996 American Institute of Physics. [S0003695196017275].
F. Cartier, D.J. DiMaria, et al.
DRC 1994
Sarunya Bangsaruntip, A. Majumdar, et al.
VLSI Technology 2010
R. Ludeke, H.J. Wen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Guy Cohen, E. Cartier, et al.
DRC 2010