Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
The strength of the hot-phonon effect generated by hot carriers in a two-dimensional heterolayer is estimated, specifically for electrons in GaAs. Both acoustic-mode phonons, at low temperature, and LO phonons are considered. For the former the phonon mean free path is taken to be large compared to the heterolayer thickness. The LO phonons are, however, assumed to decay locally. In both cases the estimates indicate that substantial hot phonon effects are to be expected in realized conditions. © 1985.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Sung Ho Kim, Oun-Ho Park, et al.
Small
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011