F. Legoues, M. Liehr, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Paper
Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device quality
Abstract
The surface reactivity of hydrogen-passivated, HF-cleaned Si(100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organic molecules forming SiC. Metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant.
Related
S.S. Dana, M. Liehr, et al.
Applied Physics Letters
M. Liehr, C.M. Greenlief, et al.
Applied Physics Letters
M. Offenberg, M. Liehr, et al.
VLSI Technology 1990