R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Paper
IBM 193nm semiconductor resist: Material properties, resist characteristics and lithographic performance
Abstract
Using substituted poly(norbornenes), we have developed an etch-resistant, high resolution single layer 193nm positive resist. This paper describes the optical absorption properties, oxide-etch characteristics and resolution capabilities of such a first generation IBM resist. ©1999TAPJ.
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