Conference paperCharacteristics and device design of sub-100 nm strained Si N- and PMOSFETsK. Rim, J.O. Chu, et al.VLSI Technology 2002
PaperEffect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopyS.J. Koester, K. Rim, et al.Applied Physics Letters
Conference paperPhotoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on siliconStefan Zollner, R.T. Collins, et al.SPIE Semiconductors 1992
PaperObservation of ballistic conductance and Aharonov-Bohm oscillations in Si/SiGe heterostructuresW.X. Gao, K. Ismail, et al.Applied Physics Letters
