Conference paperA non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effectsLan Wei, David J. Frank, et al.IEDM 2009
PaperSilicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam EpitaxyGary L. Patton, Subramanian S. Iyer, et al.IEEE Electron Device Letters
PaperNoniterative compact modeling for intrinsic carbon-nanotube FETs: Quantum capacitance and ballistic transportLan Wei, David J. Frank, et al.IEEE T-ED
PaperDiscrete random dopant distribution effects in nanometer-scale MOSFETsHon-Sum Philip Wong, Yuan Taur, et al.Microelectronics Reliability
