Complementary III-V heterostructure tunnel FETs
Kirsten E. Moselund, D. Cutaia, et al.
ESSDERC 2016
Ultrathin-body (UTB) III-V channel MOSFETs are known to suffer from the floating body effect which turns on a parasitic bipolar junction transistor (BJT) and increases the off-state leakage current. This paper presents a TCAD simulation study of UTB In0.53Ga0.47As n-channel MOSFETs with nanowire and planar device geometry, each with different gate lengths ( ) ranging from 13 to 300 nm. A single set of parameters results in good agreement with measured transfer characteristics of all six different device geometries. The impact of band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and the electrostatic effect of traps at the buried-Al2O3/InGaAs interface has been deconvoluted during the TCAD analysis. It is found that the turn-on of the parasitic BJT is mainly caused by the combined effect of BTBT at the channel-drain junction and TAT at the gate-oxide/drain overlap. Furthermore, it is revealed that traps at the buried-Al2O3/InGaAs act as a backgate and degrade the subthreshold swing of the planar MOSFETs. The off-state leakage due to the parasitic BJT could be minimized with the help of an oxide spacer between HfO2 and InGaAs drain and by introducing a dopant grading at the source-channel and the drain-channel interfaces.
Kirsten E. Moselund, D. Cutaia, et al.
ESSDERC 2016
Veeresh Deshpande, Herwig Hahn, et al.
VLSI Technology 2017
Simon Hönl, Katharina Schneider, et al.
CLEO 2018
Katharina Schneider, Pol Welter, et al.
SPIE Nanoscience + Engineering 2017