Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz
- Svenja Mauthe
- Yannick Baumgartner
- et al.
- 2020
- OFC 2020
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18 results for Saurabh Sant
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- IEDM 2018
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Mattias Borg
- Lynne Gignac
- et al.
- 2018
- Nanotechnology
Modeling whispering gallery mode III-V micro-lasers monolithically integrated on Silicon
- Saurabh Sant
- Andreas Schenk
- et al.
- 2018
- NUSOD 2018
Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures
- Saurabh Sant
- Paulina Aguirre
- et al.
- 2018
- IEEE T-ED
Complementary III-V heterojunction tunnel FETs monolithically integrated on silicon
- Clarissa Convertino
- Heinz Schmid
- et al.
- 2018
- ECS Meeting 2018
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- Herwig Hahn
- Veeresh Deshpande
- et al.
- 2017
- IEDM 2017
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2017
- SISPAD 2017
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2017
- IWJT 2017
How non-ideality effects deteriorate the performance of tunnel FETs
- Andreas Schenk
- Saurabh Sant
- et al.
- 2017
- EDTM 2017