The DX centre
T.N. Morgan
Semiconductor Science and Technology
By covering amorphous silicon (a-Si) with a thin metal film, it is possible to lower the crystallization temperature of the a-Si (typically around 800 °C when using ramp anneals) to levels which can be used in a manufacturing process. This phenomenon of Metal Induced Crystallization (MIC) has been reported previously for Ni, Au and Al. In this work, in-situ X-ray Diffraction was used to study the MIC process for 20 different metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al). The 7 metals which lower the crystallization temperature the most are Ni, Pt, Pd, Cu, Au, Al and Ag. The crystallization kinetics were studied in detail for these 7 materials. In order to explain the MIC process, two models where used depending on the interaction of the metal with Si (eutectic or compound forming). © 2007 Elsevier B.V. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids