Conference paper
Gate work function engineering for nanotube-based circuits
Zhihong Chen, Joerg Appenzeller, et al.
ISSCC 2007
A simple potential mapping is used to show that tunneling through a single barrier, as in Schottky-barrier tunneling or source-to-drain tunneling in MOSFETs, cannot give rise to subthreshold swings below the thermionic limit (60 mV/decade at room temperature). While cognizant of the difficulty of proving a negative, it is thus highly unlikely that Schottky-barrier tunneling alone can result in reported instances of subthreshold swings that are less than 60 mV/decade. © 2006 IEEE.
Zhihong Chen, Joerg Appenzeller, et al.
ISSCC 2007
Paul M. Solomon
IEEE Electron Device Letters
Matthew Copel, Marcelo A. Kuroda, et al.
Nano Letters
Paul M. Solomon, Isaac Lauer, et al.
IEEE Electron Device Letters