Examination of hole mobility in ultra-thin body SOI MOSFETs

Abstract

An examination of hole mobility in ultra-thin body (UTB) silicon on insulator (SOI) MOSFET is presented. Strong degradation of hole mobility in ultra-thin Si bodies was observed. Analysis indicated that surface roughness scattering, enhanced by spatial confinement due to the small Si thicknesses could be a major contributor to mobility degradation for thickness below 5 nm.