Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
Inelastic electron scattering from ultrathin metallic films on Si(111)
Abstract
The resistivity of ultrathin metallic films on semiconductor surfaces can be obtained from inelastic electron scattering measurements. Illustrative applications to Au and Pd films on Si(111) and to Ag films on GaAs(111) are presented. A general discussion about the nature of the quasi-elastic peak in EELS from various surfaces is also presented. © 1986.
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