Y. Hsu, W.I. Wang, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Inelastic tunneling in AlAs-GaAs-AlAs heterostructures
Abstract
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.