M. Ogawa, E. Mendez
Solid State Electronics
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
M. Ogawa, E. Mendez
Solid State Electronics
E. Mendez, P.J. Price, et al.
Applied Physics Letters
J.A. Kash, M. Zachau, et al.
Surface Science
J.A. Kash, M. Zachau, et al.
SPIE Physics and Simulation of Optoelectronic Devices 1992