W.I. Wang, E. Mendez, et al.
IEEE T-ED
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
W.I. Wang, E. Mendez, et al.
IEEE T-ED
J.M. Hong, M.C. Wu, et al.
Applied Physics Letters
C. Tejedor, J.M. Calleja, et al.
Physical Review B
L.F. Luo, R. Beresford, et al.
Applied Physics Letters