F. Legoues, M. Liehr, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1-xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60°dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.
F. Legoues, M. Liehr, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
M.W. Wang, D.A. Collins, et al.
Applied Physics Letters
F. Legoues, P.M. Mooney, et al.
Applied Physics Letters
R.M. Feenstra, J. Woodall, et al.
ICDS 1993