K. Eberl, Subramanian S. Iyer, et al.
Applied Physics Letters
The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1-xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60°dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed. © 1995 American Institute of Physics.
K. Eberl, Subramanian S. Iyer, et al.
Applied Physics Letters
R.M. Feenstra, A.J. Slavin, et al.
Ultramicroscopy
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
D.B. Beach, R.T. Collins, et al.
MRS Proceedings 1992