Interconnect material choices for future scaled devices

Abstract

Resistance Selection - • Cu (and Cu alloys) are the best in near/mid term. • Contact resistance expected to dominate CNTs. • P-doped Si work (Weber) demonstrates the ability to maintain bulk resistivity at 2 nm linewidth: proper metal/dielectric match • NiSi & W may compete with Cu for A < 100 nm2 (6 nm linewidth). - Integration of NiSi in BEOL? Additional Factors - Juse • CNT & NiSi are expected to outperform Cu - EM • CNT & NiSi are expected to outperform Cu - Integrating with dielectrics • Experience with Cu, W • Non-optimized solutions for CNT & NiSi.