Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Understanding the requirements for obtaining high mobility gate stacks in a low temperature process is crucial for enabling a low temperature integration flow. A low temperature integration scheme may be necessary for higher-k dielectrics (k > 25) or for extremely scaled devices (<15 nm node). This paper demonstrates that nitrogen free interfaces are required for high mobility gate stacks in a low temperature (600 °C) process flow. © 2009 Elsevier B.V. All rights reserved.
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
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Semiconductor Science and Technology
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MRS Fall Meeting 2020
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