Lawrence Suchow, Norman R. Stemple
JES
Tunneling through n-GaAs/AlxGa1-xAs/n-GaAs barriers has been systematically investigated over a wide range of barrier heights and thicknesses (up to 100 nm). This study provides experimental evidence that an electron sees a dynamically variable potential barrier as it tunnels through. The general form of this potential is inferred from the data, and its relation to the tunneling time of Büttiker and Landauer discussed. © 1988.
Lawrence Suchow, Norman R. Stemple
JES
A. Reisman, M. Berkenblit, et al.
JES
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
P. Alnot, D.J. Auerbach, et al.
Surface Science