J.H. Stathis, R. Bolam, et al.
INFOS 2005
Tunneling through n-GaAs/AlxGa1-xAs/n-GaAs barriers has been systematically investigated over a wide range of barrier heights and thicknesses (up to 100 nm). This study provides experimental evidence that an electron sees a dynamically variable potential barrier as it tunnels through. The general form of this potential is inferred from the data, and its relation to the tunneling time of Büttiker and Landauer discussed. © 1988.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Ellen J. Yoffa, David Adler
Physical Review B
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MRS Spring Meeting 1999