Alwin E. Michel
Nuclear Inst. and Methods in Physics Research, B
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100°C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550°C is consistent with this result.
Alwin E. Michel
Nuclear Inst. and Methods in Physics Research, B
O. Thomas, P. Gas, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M. Arienzo, Y. Komem, et al.
Journal of Applied Physics
L. Clevenger, M. Yoon, et al.
ADMETA 2004