F. Chen, Michael Shinosky, et al.
IRPS 2011
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100°C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550°C is consistent with this result.
F. Chen, Michael Shinosky, et al.
IRPS 2011
O. Thomas, P. Gas, et al.
Journal of Applied Physics
T.O. Sedgwick
JES
G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters