ION BEAM TECHNIQUES FOR THE DEPOSITION OF CERAMIC THIN FILMS.

Abstract

Broad-beam multiaperture ion sources are capable of generating collimated ion beams of narrow energy spread and high flux at low background pressure. These features allow the preparation of compound thin films under controlled conditions. The operation of broad-beam ion sources is summarized, followed by two examples of compound formation using ion beams: surface compound layer formation (e. g. , ion beam oxidation of Ni) and reactive compound deposition (e. g. , dual ion beam deposition of Si//3N//4). In each case, the quantitative information inherent in the technique adds to the understanding and control of the film growth environment. Ion source developments are also discussed.