Keith A. Jenkins, J.Y.-C. Sun
IEEE Electron Device Letters
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
Keith A. Jenkins, J.Y.-C. Sun
IEEE Electron Device Letters
Joel Silberman, Naoaki Aoki, et al.
IEEE Journal of Solid-State Circuits
D. Boerstler, Keith A. Jenkins
VLSI Circuits 1998
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VLSI Technology 2002