Conference paper
15 Kb 1.5 ns Access on-chip tag SRAM
P.F. Lu, S.P. Kowalcyzk, et al.
VLSI-TSA 1997
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
P.F. Lu, S.P. Kowalcyzk, et al.
VLSI-TSA 1997
J.N. Burghartz, M. Soyuer, et al.
IEDM 1995
A. Deutsch, W.D. Becker, et al.
IEEE Topical Meeting EPEPS 1996
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IEDM 1990