PaperTP-B5 Beam-Induced Switching Phenomena in ZnS:Mn BL Memory DevicesO. Sahni, W.E. Howard, et al.IEEE T-ED
PaperTP-A6 The Behavior of Schottky Barriers to GaAs as a function of Annealing TemperatureH.J. Hovel, C. LanzaIEEE T-ED
PaperOne-dimensional numerical simulation of ac discharges in a high-pressure mixture of Ne+0.1% Ar confined to a narrow gap between insulated metal electrodesO. Sahni, C. Lanza, et al.Journal of Applied Physics
