PaperIn situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfacesX. Yin, H.-M. Chen, et al.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Conference paperHigh transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contactsC.L. Lin, M.O. Aboelfotoh, et al.IEDM 1993
PaperLow-temperature grown III-V materialsM.R. Melloch, J. Woodall, et al.Annual Review of Materials Science