Capacitance analysis of wire-array solar cell
Oki Gunawan, Babak Fallahazad, et al.
PVSC 2010
We demonstrate a ternary (LaxY1-x)2O 3 thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths. © 2002 American Institute of Physics.
Oki Gunawan, Babak Fallahazad, et al.
PVSC 2010
Changhwan Choi, Vijay Narayanan
Electrochemical and Solid-State Letters
Shubham Jain, Hsinyu Tsai, et al.
IEEE Transactions on VLSI Systems
Brent A. Wacaser, Mark C. Reuter, et al.
Nano Letters