Min Dai, Yanfeng Wang, et al.
Journal of Applied Physics
During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide real defect induced leakage. This paper investigates different sources of leakages - defects in SiGe, pressure due to tester probe on test pads, silicidation issues and boron P+ and arsenic N halo ion implants dose/energy. Some changes to mitigate the extraneous leakage are also presented in the paper. © 2011 IEEE.
Min Dai, Yanfeng Wang, et al.
Journal of Applied Physics
Ahmet Ozcan, Ming Cai, et al.
ADMETA 2011
Ankur Arya, Balaji Jayaraman, et al.
IWPSD 2011
Marinus Hopstaken, Dirk Pfeiffer, et al.
ECS Transactions