Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
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48 results for Paul Ronsheim
Tunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design
- Paul M. Solomon
- David J. Frank
- et al.
- 2003
- IEDM 2003
20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device
- K.L. Lee
- F. Cardone
- et al.
- 2003
- IEDM 2003
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Low thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography
- M. Gribelyuk
- M.R. McCartney
- et al.
- 2002
- Physical Review Letters
Transient enhanced diffusion and dose loss of indium in silicon
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 1999
- MRS Spring Meeting 1999
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- G. Shahidi
- Bijan Davari
- et al.
- 1993
- IEEE Electron Device Letters
Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing
- Hiroshi Itokawa
- Nathaniel C. Beriiner
- et al.
- 2012
- IWJT 2012