An asymmetrical double-gate VCO with wide frequency range
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
Leakage power and input pattern dependence of leakage for extremely scaled (Leff = 25 nm) double-gate (DG) circuits are analyzed, compared with those of conventional bulk-Si counterpart. Physics-based numerical two-dimensional simulation results for DG CMOS device/circuit power are presented, identifying that DG technology is an ideal candidate for low-power applications. Unique DG device features resulting from gate-gate coupling are discussed and effectively exploited for optimal low-leakage device design. Design tradeoffs for DG CMOS power and performance are suggested for low-power and high-performance applications. Total power consumptions of static and dynamic circuits and latches for DG device, considering state dependency, show that leakage currents for DG circuits are reduced by a factor of over 10x, compared with bulk-Si counterpart. © 2005 IEEE.
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
C.Sture Petersson, Harry J. Whitlow, et al.
Nuclear Inst. and Methods in Physics Research, B
Keunwoo Kim, Ching-Te Chuang, et al.
International Journal of Electronics
Aditya Bansal, Rama N. Singh, et al.
ICCAD 2009