Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
The energies of the Raman G-band transitions in both metallic and semiconducting CNTs are renormalized by the electron-phonon interaction, leading to energy shifts in Raman spectra of gated CNT devices. In addition in metallic CNTs, the linewidth decreases sharply upon electrostatic doping because the Γ-point phonon can no longer decay into electronhole pairs when the Fermi level is removed by more than 1/2 the phonon energy from the K-point. Raman spectroscopy can therefore be used to locally measure charge density and capacitance of individual CNTs in a nanotube field-effect transistor. Experiments under bias reveal breaks in nanotubes and depleted nanotube segments close to the contacts. (Figure Presented) © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Ronald Troutman
Synthetic Metals
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Surface Review and Letters