S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Long-term measurement of bias temperature instability (BTI) degradation obtained from an on-chip sensor is presented. The sensor reports measurements periodically with a digital output. Implemented on IBM's z196 enterprise systems using IBM 45 nm technology, it can be used to monitor long-term degradation under real-use conditions. Over 700 days worth of ring oscillator degradation data from customer systems is presented. The data obtained by this sensor are consistent with models based on accelerated testing.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Robert W. Keyes
Physical Review B