L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The density of interface states at the epitaxial CaF2-Si(111) interface grown under UHV conditions at 700 °C is found to be much lower than assumed previously, as revealed from photoelectron spectroscopy. An upper limit is estimated to be 3 × 1012 cm-2 eV-1 near midgap, which comes close to values obtained for SiO2-Si interfaces.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Peter J. Price
Surface Science
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters