Low-temperature epitaxial growth of Si, SiGe, Ge, and SiC in a 300mm UHV/CVD reactor

Abstract

Low-temperature epitaxial Si, SiGe, and SiC films were grown in a 300mm cold-wall UHV/CVD reactor on (100) silicon wafers (bulk and SOI) at temperatures ranging from 300 to 800°C using disilane, germane and methylsilane. Four key advantages of UHV/CVD over RPCVD are demonstrated: (i) higher structural quality of epitaxial Si using disilane as a precursor, (ii) highly controlled growth of ultra-thin Si down to ∼6 Å, (iii) planar growth of SiGe at ultra low temperature (< 375°C), and (iv) planar growth of germanium at temperatures of less than 350°C. ©The Electrochemical Society.