Hiroshi Ito, Reinhold Schwalm
JES
In situ resistivity measurements, X-ray diffraction, 4He+ megaelectronvolt backscattering and Auger electron spectrometry were used to investigate the effect of oxygen diffusion on the electrical properties of a thin titanium film deposited onto silicon and heated at temperatures below 500°C. The annealing was performed in a vacuum of 10-5 Pa and in a hot purified helium furnace. The vacuum-annealed samples show a sharp increase in resistivity around 300°C. The increase is not due to silicon diffusion but is attributed to oxygen contamination. The presence of oxygen deforms the hexagonal structure of the titanium; the bond length along the c axis increases proportionally to the resistivity of the film. Annealing at temperatures higher than 500°C promotes silicide formation. The oxygen contained in the titanium film is segregated towards the outermost surface. © 1987.
Hiroshi Ito, Reinhold Schwalm
JES
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989