Luminescence, Spectroscopy and Composition Fluctuations in (110) Cross Sections of AIGaAs Multilayers

Abstract

The controlled growth of semiconductor (ternary and quaternary) compound layers and their interfaces is a key concern in epitaxial technology. Ultimately both crystallographic and elemental accuracy on the atomic scale is required. In the analysis of such multilayers, however, large-scale' techniques such as transmission electron microscopy and e:iciton luminescence are usually employed which retrieve their signals from a large number of crystalline unit cells (typically 102 to 104).Therefore their analysis gives averaged data. © 1992 Optical Society of America