William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A technique has been developed that allows the energy profile of quantum wells in AlxGa1-xAs heterostructures to be mapped directly. The lateral resolution is a few nanometers, which allows the band-bending profile and the conduction-band discontinuity of interfaces within the heterostructure to be probed directly. The technique is based on the excitation of luminescence in the III-V compounds using the tip of a scanning tunneling microscope as a source of electrons. © 1991 The American Physical Society.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990