Julien Autebert, Aditya Kashyap, et al.
Langmuir
A technique has been developed that allows the energy profile of quantum wells in AlxGa1-xAs heterostructures to be mapped directly. The lateral resolution is a few nanometers, which allows the band-bending profile and the conduction-band discontinuity of interfaces within the heterostructure to be probed directly. The technique is based on the excitation of luminescence in the III-V compounds using the tip of a scanning tunneling microscope as a source of electrons. © 1991 The American Physical Society.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Hiroshi Ito, Reinhold Schwalm
JES
J.C. Marinace
JES
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics