High mobility channels for ultimate CMOS
D.K. Sadana, S.J. Koester, et al.
ECS Meeting 2006
Solid phase epitaxy (SPE) of patterned amorphized Si regions in direct-Si-bonded (DSB) hybrid orientation substrates is complicated by the fact that the amorphized Si regions being recrystallized have sides and bases formed from different Si crystals. In DSB wafers with a Si (011) DSB layer on a Si (001) handle wafer, the competition between lateral and vertical SPE produces distinctively angled mask-edge defects and recrystallization fronts. Some mask edges exhibit triangular bands of defective Si bounded by DSB and handle wafer {111} planes meeting at 90° angles, while other mask edges are relatively defect free, but can have downward-pointing facets of Si (011) growing below the DSB interface. A simple model recently developed to explain trench-edge defect formation and faceted recrystallization in bulk single-orientation Si appears to explain all of these observations. © 2007 American Institute of Physics.
D.K. Sadana, S.J. Koester, et al.
ECS Meeting 2006
K. Rim, S.J. Koester, et al.
VLSI Technology 2001
F.K. LeGoues, J.A. Ott, et al.
Applied Physics Letters
M. Guillorn, J. Chang, et al.
VLSI Technology 2008