A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110. © 1991 Springer-Verlag.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
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SPIE Advanced Lithography 2008
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures