A. Portavoce, M. Kammler, et al.
Materials Science in Semiconductor Processing
We have investigated the interaction of Pt with single-crystal SrTiO3(001) and polycrystalline Ba0.7Sr0.3TiO3 thin films using photoemission spectroscopies. Significant band bending is caused by interface formation, determining the Schottky barrier height. We have depth profiled the band bending for Ba0.7Sr0.3TiO3 thin films, giving a direct measurement of the depletion depth and built-in potential. © 1997 American Institute of Physics.
A. Portavoce, M. Kammler, et al.
Materials Science in Semiconductor Processing
E. Gusev, C. Cabral Jr., et al.
Microelectronic Engineering
M. Copel, M. Gribelyuk, et al.
Applied Physics Letters
D.C. La Tulipe, L.T. Shi, et al.
GBC 2006