Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films. © 1991 Elsevier Science Publishers B.V. All rights reserved.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
T.N. Morgan
Semiconductor Science and Technology