Baozhen Li, Cathryn Christiansen, et al.
Microelectronics Reliability
Modulation of Cu interconnect microstructure in a low-k dielectric was achieved at an elevated anneal temperature of 250 ̂C}. In contrast to the unpassivated conventional structure, a TaN metal passivation layer was deposited on the plated Cu overburden surface before annealing at the elevated temperature to prevent stress migration reliability degradation. As compared with the conventional structure annealed at 100 ̂ C , the elevated annealing process enabled further Cu grain growth, which then resulted in an increased Cu grain size and improved electromigration resistance in the interconnects. © 2014 IEEE.
Baozhen Li, Cathryn Christiansen, et al.
Microelectronics Reliability
Ernest Y. Wu, Baozhen Li
Journal of Applied Physics
Matthew Angyal, Jason Gill, et al.
AMC 2005
Emmanuel Yashchin, Baozhen Li, et al.
IRPS 2012