Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
K.A. Chao
Physical Review B
A. Krol, C.J. Sher, et al.
Surface Science