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Journal of Applied Physics
Paper

Misfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenide

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Abstract

Linear morphological features which are readily revealed using Nomarski interference contrast microscopy have been observed on the surfaces of Ga xAl1-xAs epitaxial layers grown by liquid phase epitaxy LPE on GaAs substrates at 950°C. These features are introduced along one <110≳ direction in the (001) growth surface only. Annealing at the growth temperature produces a similar set of features in the perpendicular <110≳ direction. Photoluminescence topographs reveal dark lines in the substrates that are directed parallel to the sets of surface features in both annealed and unannealed crystals.

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Journal of Applied Physics

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