Conference paper
Strain engineering for silicon CMOS technology
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
Degradation of near band gap photo-luminescence emission in GaAs with time of exposure to low power, c.w. laser excitation at room temperature is quantitatively described by a model based on defect reactions that are promoted by trapping and recombination of excess carriers at nonradiative recombination sites. The proposed model accurately describes the observed degradation rate, its power and temperature dependence, as well as the absence of degradation at a surface with shallow ion implantation. © 1989 Società Italiana di Fisica.
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
D. Guidotti, H.M. Van Driel
Applied Physics Letters
H.J. Hovel
Solid-State Electronics
J. Cai, K. Rim, et al.
IEDM 2004